Munawar Agus Riyadi, S.T, M.T, Ph.D
Biography
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The future of non-planar nanoelectronics MOSFET devices: A review
NQ
JOURNAL OF APPLIED SCIENCES (ISSN: 18125654) , vol. 10 , pp. 2136-2146
Creator: Riyadi M.A.
2010
17 cited
Analytical analysis of ballistic drift velocity in low-dimensional nano-devices
NQ
AMS2010: ASIA MODELLING SYMPOSIUM 2010 - 4TH INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELLING AND , pp. 601-605
Creator: Saad I.
2010
2 cited
NQ
IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, ICSE , pp. 175-179
Creator: Saad I.
2010
2 cited
Investigation of short channel immunity of fully depleted double gate MOS with vertical structure
NQ
IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, ICSE , pp. 30-33
Creator: Riyadi M.A.
2010
0 cited
Reduced parasitic capacitances analysis of nanoscale vertical MOSFET
NQ
IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, ICSE , pp. 25-29
Creator: Saad I.
2010
1 cited
Q2
MICROELECTRONICS JOURNAL (ISSN: 00262692) , vol. 41 , pp. 827-833
Creator: Riyadi M.A.
2010
4 cited
The corner effects of a curved-channel MOSFET
Q4
AIP CONFERENCE PROCEEDINGS (ISSN: 0094243X) , vol. 1325 , pp. 179-181
Creator: Suseno J.E.
2010
0 cited
The influence of body-tied and floating-body structure in double gate vertical n-MOSFET
NQ
2010 INTERNATIONAL CONFERENCE ON ENABLING SCIENCE AND NANOTECHNOLOGY, ESCINANO 2010 - PROCEEDINGS
Creator: Alias N.E.
2010
0 cited
Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
NQ
2010 INTERNATIONAL CONFERENCE ON ENABLING SCIENCE AND NANOTECHNOLOGY, ESCINANO 2010 - PROCEEDINGS
Creator: Riyadi M.
2010
0 cited
Physics-based simulation of carrier velocity in 2-dimensional P-type MOSFET
NQ
PROCEEDINGS - 2009 3RD ASIA INTERNATIONAL CONFERENCE ON MODELLING AND SIMULATION, AMS 2009 , pp. 735-738
Creator: Riyadi M.A.
2009
2 cited