Performance comparison of asymmetric drain/source topology in nanoscale Double Gate vertical MOSFET

NQ

PROCEEDINGS - 2013 INTERNATIONAL CONFERENCE ON INFORMATION TECHNOLOGY AND ELECTRICAL ENGINEERING: "I , pp. 455-459

Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free path

Q1

JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) , vol. 111

Modeling of drain current for grooved-gate MOSFET

Q2

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE (ISSN: 15461955) , vol. 9 , pp. 1596-1602

Scattering effects in Silicon Nanowire Fin field effect transistor

NQ

2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, ICSE 2012 - PROCEEDINGS , pp. 86-89

Low-dimensional carrier statistics in nanostructures

Q2

CURRENT NANOSCIENCE (ISSN: 15734137) , vol. 7 , pp. 235-239

The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

Q1

JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) , vol. 109

Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts

Q4

AIP CONFERENCE PROCEEDINGS (ISSN: 0094243X) , vol. 1347 , pp. 169-174

Influence of body-tied and floating-body structure in double gate vertical n-MOSFET

Q4

AIP CONFERENCE PROCEEDINGS (ISSN: 0094243X) , vol. 1341 , pp. 143-147

Ballistic and high field transport in a nano-MOSFET

NQ

2011 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, ISDRS 2011

Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor

Q1

APPLIED PHYSICS LETTERS (ISSN: 00036951) , vol. 99