Physics-based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET

2009 THIRD ASIA INTERNATIONAL CONFERENCE ON MODELLING & SIMULATION, VOLS 1 AND 2

Authors: Riyadi, MA; Ahmadi, MT; Suseno, JE; Siew, KE; Saad, I; Ismail, R; Arora, VK;

Analytical Study Of Drift Velocity In P-Type Silicon Nanowires

NANOSCIENCE AND NANOTECHNOLOGY

Authors: Ahmadi, MT; Saad, I; Riyadi, MA; Ismail, R;

Vertical Double Gate MOSFET For Nanoscale Device With Fully Depleted Feature

NANOSCIENCE AND NANOTECHNOLOGY

Authors: Riyadi, MA; Saad, I; Ahmadi, MT; Ismail, R;

Numerical Study of Fermi energy For P-Type Silicon Nanowire

NANOSCIENCE AND NANOTECHNOLOGY

Authors: Ahmadi, MT; Riyadi, MA; Saad, I; Ismail, R;

Analytical Study of Carrier Statistic in 2-Dimensional Nanoscale P-MOS

NANOSCIENCE AND NANOTECHNOLOGY

Authors: Riyadi, MA; Ahmadi, MT; Saad, I; Ismail, R;

NUMERICAL ANALYSIS OF CARRIER STATISTICS IN LOW-DIMENSIONAL NANOSTRUCTURE DEVICES

JURNAL TEKNOLOGI

Authors: Saad, I; Ahmadi, MT; Riyadi, MA; Ismail, R; Arora, VK;

Characterization Analysis of a Novel Approach in Fabrication of CMOS Compatible Vertical MOSFETs Incorporating a Dielectric Pocket

ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS

Authors: Riyadi, MA; Napiah, ZAFM; Saad, I; Ismail, R;

SELF-ALIGNED DOUBLE-GATE (DG) VERTICAL MOSFET's USING OBLIQUE ROTATING IMPLANTATION (ORI) METHOD WITH REDUCED PARASITIC CAPACITANCE

ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS

Authors: Saad, I; Riyadi, MA; Ismail, R; Arora, VK;

Short Channel Effect of SOI Vertical Sidewall MOSFET

ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS

Authors: Suseno, JE; Riyadi, MA; Ismail, R;

Silicon Pillar Thickness Effect on Vertical Double Gate MOSFET (VDGM) with Oblique Rotating Implantation (ORI) Method

ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS

Authors: Riyadi, MA; Saad, I; Ismail, R;