The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

JOURNAL OF APPLIED PHYSICS

Authors: Riyadi, MA; Arora, VK;

Low-Dimensional Carrier Statistics in Nanostructures

CURRENT NANOSCIENCE

Authors: Qindeel, R; Riyadi, MA; Ahmadi, MT; Arora, VK;

Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor

APPLIED PHYSICS LETTERS

Authors: Arora, VK; Abidin, MSZ; Tembhurne, S; Riyadi, MA;

An Analytical Threshold Voltage Model for the Vertical Sidewall Mosfet with a Curved-Channel

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE

Authors: Suseno, JE; Anwar, S; Riyadi, MA; Ismail, R;

The Corner Effects of a Curved-Channel MOSFET

4TH ASIAN PHYSICS SYMPOSIUM: AN INTERNATIONAL EVENT

Authors: Suseno, JE; Riyadi, MA; Ismail, R;

Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET

MICROELECTRONICS JOURNAL

Authors: Riyadi, MA; Saad, I; Ismail, R;

Design and Simulation Analysis of Nanoscale Vertical MOSFET Technology

2009 IEEE STUDENT CONFERENCE ON RESEARCH AND DEVELOPMENT: SCORED 2009, PROCEEDINGS

Authors: Saad, I; Lee, RMA; Riyadi, MA; Ismail, R;

Body doping influence in vertical MOSFET design

2009 CONFERENCE ON INNOVATIVE TECHNOLOGIES IN INTELLIGENT SYSTEMS AND INDUSTRIAL APPLICATIONS

Authors: Riyadi, MA; Napiah, ZAFM; Suseno, JE; Saad, I; Ismail, R;

Artificial Intelligence Techniques for SPICE Optimization of MOSFET Modeling

2009 CONFERENCE ON INNOVATIVE TECHNOLOGIES IN INTELLIGENT SYSTEMS AND INDUSTRIAL APPLICATIONS

Authors: Suseno, JE; Riyadi, MA; Alias, NE; Heong, YW; Ismail, R;

Extraction of SPICE Model for Double Gate Vertical MOSFET

2009 THIRD ASIA INTERNATIONAL CONFERENCE ON MODELLING & SIMULATION, VOLS 1 AND 2

Authors: Suseno, JE; Ahmadi, MT; Riyadi, MA; Ismail, R;