Design of a vertical mosfet with combination of a dielectric pocket (dp) and silicon on insulator (soi)

Authors: J E Suseno, M A Riyadi, N E Alias, R Ismail

Numerical study of diffusion current characteristic for nondegenerate n-type strained silicon mosfet

ZON REGENCY HOTEL, JOHOR BAHRU, MALAYSIA (ICORAFSS 2009), 2009

Authors: KE Siew, MT Ahmadi, MA Riyadi, R Ismail

Short channel effect of soi vertical sidewall mosfet

2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, 487-490, 2008

Authors: JE Suseno, MA Riyadi, R Ismail

Silicon pillar thickness effect on vertical double gate mosfet (vdgm) with oblique rotating implantation (ori) method

2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, 475-479, 2008

Authors: MA Riyadi, I Saad, R Ismail

Characterization analysis of a novel approach in fabrication of cmos compatible vertical mosfets incorporating a dielectric pocket

2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, 639-642, 2008

Authors: MA Riyadi, ZAFM Napiah, I Saad, R Ismail

Self-aligned double-gate (dg) vertical mosfet’s using oblique rotating implantation (ori) method with reduced parasitic capacitance

2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, 604-608, 2008

Authors: I Saad, MA Riyadi, R Ismail, VK Arora

Design of soi double gatevertical mosfet

Authors: J E Suseno, M A Riyadi, R Ismail

Vertical mosfet incorporating dielectric pocket with contactwidth variations

Authors: NE Alias, M A Riyadi, I Saad, R Ismail

Characterization and modeling of a gaas hfet toward design of linear 2.4 ghz high power amplifier

2000 ASIA-PACIFIC MICROWAVE CONFERENCE. PROCEEDINGS (CAT. NO. 00TH8522 …, 2000

Authors: A Khusaidi, MA Riyadi, BR Alam

Carrier statistics in low dimensional nanostructures

IEEE 2009

Authors: T Saxena, M Riyadi, N Hussain, R Ismail, R Qindeel, VK Arora