Ballistic saturation velocity of quasi‐2d low‐dimensional nanoscale field effect transistor (fet)

AIP CONFERENCE PROCEEDINGS 1136 (1), 302-306, 2009

Authors: I Saad, MT Ahmadi, AR Munawar, R Ismail, VK Arora

Design and simulation analysis of nanoscale vertical mosfet technology

2009 IEEE STUDENT CONFERENCE ON RESEARCH AND DEVELOPMENT (SCORED), 215-218, 2009

Authors: I Saad, RMA Lee, MA Riyadi, R Ismail

Extraction of spice model for double gate vertical mosfet

2009 THIRD ASIA INTERNATIONAL CONFERENCE ON MODELLING & SIMULATION, 761-766, 2009

Authors: JE Suseno, MT Ahmad, MA Riyadi, R Ismail

Physics-based simulation of carrier velocity in 2-dimensional p-type mosfet

2009 THIRD ASIA INTERNATIONAL CONFERENCE ON MODELLING & SIMULATION, 735-738, 2009

Authors: MA Riyadi, MT Ahmadi, JE Suseno, KE Siew, I Saad, R Ismail, VK Arora

Investigation of short channel effect on vertical structures in nanoscale mosfet

TELKOMNIKA 7 (3), 175-180, 2009

Authors: MA Riyadi, I Saad, R Ismail

Artificial intelligence techniques for spice optimization of mosfet modeling

2009 INNOVATIVE TECHNOLOGIES IN INTELLIGENT SYSTEMS AND INDUSTRIAL …, 2009

Authors: JE Suseno, MA Riyadi, NE Alias, YW Heong, R Ismail

Analytical study of carrier statistic in 2‐dimensional nanoscale p‐mos

AIP CONFERENCE PROCEEDINGS 1136 (1), 89-92, 2009

Authors: MA Riyadi, MT Ahmadi, I Saad, R Ismail

Analytical study of drift velocity in p‐type silicon nanowires

AIP CONFERENCE PROCEEDINGS 1136 (1), 264-268, 2009

Authors: MT Ahmadi, I Saad, MA Riyadi, R Ismail

Design and analysis of nanoscale vertical mosfet using oblique rotating implantation (ori) method with reduced parasitic capacitance

AIP CONFERENCE PROCEEDINGS 1136 (1), 79-83, 2009

Authors: I Saad, AR Munawar, MT Ahmadi, R Ismail

Numerical analysis of vertical double gate mosfets (vdgm) with dielectric pocket (dp) effects on silicon pillar for nanoscale transistor

AIP CONFERENCE PROCEEDINGS 1136 (1), 840-844, 2009

Authors: I Saad, RMA Lee, AR Munawar, MT Ahmadi, R Ismail